Model and computer simulation of nanosecond laser material ablation
نویسندگان
چکیده
منابع مشابه
Ultraviolet femtosecond and nanosecond laser ablation of silicon: ablation efficiency and laser-induced plasma expansion
Femtosecond laser ablation of silicon in air was studied and compared with nanosecond laser ablation at ultraviolet wavelength (266 nm). Laser ablation efficiency was studied by measuring crater depth as a function of pulse number. For the same number of laser pulses, the fs-ablated crater was about two times deeper than the ns-crater. The temperature and electron number density of the pulsed l...
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A breathing sphere model has been developed for molecular dynamics simulations of laser ablation of organic solids. The novel feature of this model is an approximate representation of the internal molecular motion, which permits a significant expansion of the time and length scales of the model, and yet still allows one to reproduce a realistic rate of the vibrational relaxation of excited mole...
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This work investigates interface kinetics during nanosecond pulsed excimer ablation of a metal. During laser heating, the surface can reach a temperature higher than the normal boiling point, resulting in a superheated, metastable state. Phase explosion occurs as the temperature approaches the thermodynamic critical point, which turns the melt into a mixture of liquid and vapor. However, for ph...
متن کاملInvestigations of femtosecond-nanosecond dual-beam laser ablation of dielectrics.
We have conducted experimental investigations for the micromachining of dielectrics (fused silica) using an integrated femtosecond (fs) and nanosecond (ns) dual-beam laser system at different time delays between the fs and ns pulses. We found that the maximum ablation enhancement occurs when the fs pulse is shot near the peak of the ns pulse envelope. Enhancements up to 13.4 times in ablation d...
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Ž . The second harmonic of a pulsed Nd:YAG laser 532 nm has been used for the ablation of silicon samples in air at atmospheric pressure. In order to study the interaction for silicon targets, the laser-induced plasma characteristics were examined in detail with the use of a spaceand time-resolved technique. Electron temperatures, ionic temperatures and electron number densities were determined...
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ژورنال
عنوان ژورنال: Applied Physics A
سال: 2004
ISSN: 0947-8396,1432-0630
DOI: 10.1007/s00339-004-2723-x